10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS

Authors
WATTS RK LEE JTC
Citation
Rk. Watts et Jtc. Lee, 10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 14(11), 1993, pp. 515-517
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
11
Year of publication
1993
Pages
515 - 517
Database
ISI
SICI code
0741-3106(1993)14:11<515:1PTT>2.0.ZU;2-G
Abstract
Small thin-film polysilicon transistors are of interest for load devic es in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT's) with gate lengths ranging from 7 to 0.12 mum made in large-grain polysilic on.