HIGH-MOBILITY GESI PMOS ON SIMOX

Authors
NAYAK DK WOO JCS YABIKU GK MACWILLIAMS KP PARK JS WANG KL
Citation
Dk. Nayak et al., HIGH-MOBILITY GESI PMOS ON SIMOX, IEEE electron device letters, 14(11), 1993, pp. 520-522
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
11
Year of publication
1993
Pages
520 - 522
Database
ISI
SICI code
0741-3106(1993)14:11<520:HGPOS>2.0.ZU;2-Q
Abstract
A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge0.3Si0.7/Si channel, which is grown pseudomorphically on a SIM OX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, t he effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.