A PROPOSED METHOD FOR DYNAMIC FITTING OF MOS MODEL PARAMETERS

Authors
Citation
F. Kovacs et G. Hosszu, A PROPOSED METHOD FOR DYNAMIC FITTING OF MOS MODEL PARAMETERS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(10), 1993, pp. 1503-1507
Citations number
5
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Applications & Cybernetics
ISSN journal
02780070
Volume
12
Issue
10
Year of publication
1993
Pages
1503 - 1507
Database
ISI
SICI code
0278-0070(1993)12:10<1503:APMFDF>2.0.ZU;2-S
Abstract
A novel method for optimization of MOS model parameters is introduced. The method based upon dynamically fitting the measured frequency resp onse of a reconfigurable ring oscillator. The ring oscillator contains two added switching transistors and two loading capacitors. By contro lling the switching transistors, the capacitive load of the inverters and thus the oscillation frequency can be varied. The simulated and th e measured frequencies are compared and the derived average error is m inimized. Sequential iterations using combined mathematical methods ar e applied to the procedure. Simplifications are introduced in order to shorten the computational time. The effectiveness of the method on im proving the accuracy of simulation is demonstrated with numerical exam ples.