DAMAGE ACCUMULATION DURING B-11(-12(+) AND N-14(+) IMPLANTATIONS IN SI-1(), C)

In this work a contribution to the understanding of the mass and dose dependence of the radiation damage production in silicon for light mas s ion implantation is presented. The as-implanted damage profiles in S i implanted at room temperature with B-11(+), C-12(+) and N-14(+) to d oses between 1 x 10(14) cm(-2) and 2 x 10(16) cm(-2) were measured. In the regime of low doses (< 1 x 10(15) cm(-2)) the accumulation damage increases with the square root of the dose (Phi). However, for higher doses (> 2 x 10(15) cm(-2)) the accumulated damage scales with Phi(n) , being n approximate to 1 for B-11(+) implantation, 1 < n < 2 for N-1 4(+) and n > 3 for C-12(+). The higher rate of damage accumulation in carbon implantation is explained by the ''chemical'' effects associate d with the presence of high C concentration in the implanted layer. Ad ditional experiments to investigate the damage accumulation in Si cont aining a high C concentration were performed to obtain deeper insight on the involved mechanism.