PION-INDUCED DISPLACEMENT DAMAGE IN SILICON DEVICES

Authors
HUHTINEN M AARNIO PA
Citation
M. Huhtinen et Pa. Aarnio, PION-INDUCED DISPLACEMENT DAMAGE IN SILICON DEVICES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 335(3), 1993, pp. 580-582
Citations number
28
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
335
Issue
3
Year of publication
1993
Pages
580 - 582
Database
ISI
SICI code
0168-9002(1993)335:3<580:PDDISD>2.0.ZU;2-W
Abstract
We present a method to estimate the displacement damage induced by low energy pions in silicon. Our results indicate that a major part of ra diation damage at an LHC inner tracker comes from pions with energies below 1 GeV. We put our main emphasis on the necessity to measure the pion damage constant at energies around 200 MeV.