Strained layer single quantum well InGaAs lasers with a record low thr
eshold current of 1 mA for as-cleaved facets and 0.25 mA with high ref
lectivity coated facets have been demonstrated. In addition, these las
ers display a weak dependence of threshold current, quantum efficiency
, and lasing wavelength on cavity length in comparison with those sing
le quantum well lasers previously reported.