STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA

Authors
CHEN TR ENG LE ZHAO B ZHUANG YH YARIV A
Citation
Tr. Chen et al., STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA, Applied physics letters, 63(19), 1993, pp. 2621-2623
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
19
Year of publication
1993
Pages
2621 - 2623
Database
ISI
SICI code
0003-6951(1993)63:19<2621:SSILWA>2.0.ZU;2-C
Abstract
Strained layer single quantum well InGaAs lasers with a record low thr eshold current of 1 mA for as-cleaved facets and 0.25 mA with high ref lectivity coated facets have been demonstrated. In addition, these las ers display a weak dependence of threshold current, quantum efficiency , and lasing wavelength on cavity length in comparison with those sing le quantum well lasers previously reported.