IMPACT OF IN-SITU PHOTOEXCITATION ON THE DEFECTIVITY OF SILICON LAYERIMPLANTED WITH DIFFERENT DOSE-RATES OF NITROGEN-IONS

Authors
DANILIN AB NEMIROVSKI AW
Citation
Ab. Danilin et Aw. Nemirovski, IMPACT OF IN-SITU PHOTOEXCITATION ON THE DEFECTIVITY OF SILICON LAYERIMPLANTED WITH DIFFERENT DOSE-RATES OF NITROGEN-IONS, Applied physics letters, 63(19), 1993, pp. 2647-2648
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
19
Year of publication
1993
Pages
2647 - 2648
Database
ISI
SICI code
0003-6951(1993)63:19<2647:IOIPOT>2.0.ZU;2-Z
Abstract
It was shown using x-ray difrractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantati on is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of inte rstitial-type defects.