RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF IN0.53GA0.47AS FILMS USING TERTIARYBUTYLARSINE

Rapid thermal low pressure metalorganic chemical vapor deposition (RT- LPMOCVD) of lattice-matched epitaxial In0.53Ga0.47As films onto InP su bstrates was successfully performed using tertiarybutylarsine (TBA) an d growth temperatures in the range of 500-550-degrees-C. The undoped, featureless films were grown with a low V:III ratio of 2, and exhibite d an excellent morphology with a minimum backscattering yield (chi(min )) of 3.6% and narrow x-ray full width at half-maximum peak of 28 arcs ec of the InGaAs layer on InP, reflecting a lattice mismatch of 0.02%. These films presented good electrical properties, with hole mobility values of about 75 cm2/V S measured at 300 K for nominally undoped lay ers with p less-than-or-equal-to 5 X 10(15) cm-3.