ROUGHNESS AT THE INTERFACE OF THIN INP INAS QUANTUM-WELLS/

We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photolu minescence spectra consist of multiple lines. The energies of the obse rved peaks have a remarkable behavior; namely, both the peak energies and the separations between peaks change from sample to sample. We dis cuss the interpretation of the observed emission lines in connection w ith questions such as interface roughness, island formation and latera l confinement. We also discuss the strong influence of parameters such as the growth temperature and the substrate orientation on the interf ace roughness.