SELECTIVE AND NONPLANAR EPITAXY OF INP GAINAS(P) BY MOCVD/

Selective and non-planar epitaxy are important variants of the basic M OCVD process by which advanced III-V optoelectronics structures may be realised. This paper reviews work on the selective area growth of InP , GaInAs and GaInAsP some of which is both wide ranging and qualitativ e and some of which is focused and quantitative. A model has been deve loped which accurately describes the perturbations in material charact eristics produced by selective area epitaxy. Non-planar epitaxy also i s dealt with as a generic materials issue as well as attempting to rel ate the findings to such structures as butt coupled waveguides and bur ied heterostructure lasers. The exploitation of selective area epitaxy for the fabrication of a monolithically integrated laser/modulator is described and a brief account of device performance is given.