IMPROVED METHOD FOR GAAS-(GA,AL)AS EPITAXIAL REGROWTH

Authors
BEDEL E MUNOZYAGUE A FONTAINE C VIEU C
Citation
E. Bedel et al., IMPROVED METHOD FOR GAAS-(GA,AL)AS EPITAXIAL REGROWTH, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 157-160
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
21
Issue
2-3
Year of publication
1993
Pages
157 - 160
Database
ISI
SICI code
0921-5107(1993)21:2-3<157:IMFGER>2.0.ZU;2-N
Abstract
UV-ozone oxidation of GaAs epitaxial layers was evaluated for GaAs mol ecular beam epitaxy regrowth. Auger electron spectroscopy was used to determine the conditions leading to a contaminant-free surface before epitaxy; oxide uniformity, surface roughness and crystalline defects w ere also studied using transmission electron microscopy. Finally, the capability of this technique was demonstrated by growing a GaAlAs-GaAs -GaAlAs quantum well on a processed GaAs epitaxial layer.