INVESTIGATION OF MOVPE-GROWN IN0.53GA0.47AS INP MULTIQUANTUM WELLS BYRAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTOMETRY/

Authors
FINDERS J KEUTER M GNOTH D GEURTS J WOITOK J KOHL A MULLER R HEIME K
Citation
J. Finders et al., INVESTIGATION OF MOVPE-GROWN IN0.53GA0.47AS INP MULTIQUANTUM WELLS BYRAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTOMETRY/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 161-164
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
21
Issue
2-3
Year of publication
1993
Pages
161 - 164
Database
ISI
SICI code
0921-5107(1993)21:2-3<161:IOMIIM>2.0.ZU;2-I
Abstract
InGaAs/InP multi-quantum well structures, grown by metal-organic vapou r phase-epitaxy, were investigated by Raman spectroscopy and X-ray dif fractometry to analyse the influence of precursor gas switching parame ters on the interface abruptness. Owing to carry-over effects, InAsP i s formed at the InGaAs-to-InP interface for low PH3 purging times (1 s ), while for purging times greater than 4 s exchange of As by P leads to the formation of an InGaAsP interface layer, which for purging beyo nd 10 s saturates at a thickness of 1.2 nm.