SPECTROSCOPIC ELLIPSOMETRY - A USEFUL TOOL TO DETERMINE THE REFRACTIVE-INDEXES AND INTERFACES OF IN0.52AL0.48AS AND IN0.53ALXGA0.47-XAS LAYERS ON INP IN THE WAVELENGTH RANGE 280-1900 NM

Citation
Hw. Dinges et al., SPECTROSCOPIC ELLIPSOMETRY - A USEFUL TOOL TO DETERMINE THE REFRACTIVE-INDEXES AND INTERFACES OF IN0.52AL0.48AS AND IN0.53ALXGA0.47-XAS LAYERS ON INP IN THE WAVELENGTH RANGE 280-1900 NM, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 174-176
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
21
Issue
2-3
Year of publication
1993
Pages
174 - 176
Database
ISI
SICI code
0921-5107(1993)21:2-3<174:SE-AUT>2.0.ZU;2-9
Abstract
In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP are promising qua ternary materials for optoelectronic devices: lasers containing these materials have been realized and show excellent performance. The refra ctive indices of both In0.52Al0.458Ga0.022As and In0.53Al0.055Ga0.415A s are measured for the first time with multiple angle spectroscopic el lipsometry in the wavelength range 280-1900 nm.