MBE GROWTH AND PROPERTIES OF HIGH-QUALITY AL(GA)INAS GAINAS MQW STRUCTURES/

Authors
KUNZEL H BOTTCHER J HASE A SCHRAMM C
Citation
H. Kunzel et al., MBE GROWTH AND PROPERTIES OF HIGH-QUALITY AL(GA)INAS GAINAS MQW STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 194-197
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
21
Issue
2-3
Year of publication
1993
Pages
194 - 197
Database
ISI
SICI code
0921-5107(1993)21:2-3<194:MGAPOH>2.0.ZU;2-Q
Abstract
Molecular beam epitaxy-grown Al(Ga)InAs/GaInAs single quantum well and multiple quantum well structures, comprising ternary and quaternary b arriers, were investigated for laser device applications. Barrier mate rials of excellent lateral uniformity and high optical and crystalline quality, as well as low interface charge densities of the Al(Ga)InAs/ GaInAs heterojunctions, were achieved. The influence of buffer configu ration and barrier composition on the well emission properties was stu died.