P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS

Authors
RALSTON JD WEISSER S ESQUIVIAS I SCHONFELDER A LARKINS EC ROSENZWEIG J TASKER PJ MAIER M FLEISSNER J
Citation
Jd. Ralston et al., P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 232-236
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
21
Issue
2-3
Year of publication
1993
Pages
232 - 236
Database
ISI
SICI code
0921-5107(1993)21:2-3<232:PIAIOG>2.0.ZU;2-N
Abstract
We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviour in GaAs-based strained multiple quantu m well lasers. By adding 5 x 10(18)-2 x 10(19) cm(-3) beryllium doping to the active region of In0.35Ga0.65As/GaAs strained multiple quantum well lasers (4 QW's), we are able to demonstrate both very efficient high-speed modulation (20 GHz at a DC bias current of 50 mA) and the f irst semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz under DC bias (heat-sink temperature = 25 degrees C).