GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/

Since the early proposal that InGaAs/InGaAs strained-layer superlattic es (SLSs) should constitute a new class of optoelectronic materials, v ery little work has been done to master the growth conditions and opti mize the resulting superlattice properties. In this work, we present t he results of a preliminary investigation of SLSs grown by low-pressur e metal-organic vapour phase epitaxy. Two different series of samples were grown to check independently the effect of well thickness and bar rier composition. In both cases, in order to conserve one layer nomina lly lattice-matched to InP, the wells had a standard composition In0.5 3Ga0.47As.