CHARACTERIZATION OF THE HETEROSTRUCTURE BETWEEN HETEROEPITAXIALLY GROWN BETA-FESI2 AND (111)-SILICON

A new method was developed to grow beta-FeSi2 thin films heteroepitaxi ally on (111) silicon in a two-step process by first depositing an amo rphous but stoichiometric Fe + 2Si film on a (111) silicon substrate a nd a subsequent crystallization using a rapid thermal and large area p rocess. The potential of this method for the fabrication of beta-FeSi2 films was investigated as the heterostructure was characterized by tr ansmission and reflection measurements, by infrared spectroscopy, and by Rutherford backscattering. The specific resistivity, the carrier ty pe and concentration, and the mobility of the heteroepitaxially grown beta-FeSi2 were measured taking into account the influence of the n-do ped silicon substrate. The measured values are 164 (Omega cm)(-1), p-t ype with p = 8 x 10(18) cm(-3), and 128 cm(2) V-1 s(-1) respectively. The I-V characteristics of the beta-FeSi2/Si heterojunction show recti fying behaviour.