SIMULATION OF LATERAL AL RECOIL ATOMS AND DAMAGE DEFECTS GRADIENTS INA GAAS GAALAS QUANTUM-WELL CREATED BY MASKED ION-IMPLANTATION/

We have studied through computer simulations the effects of Ga+ ion im plantation through masked GaAlAs/GaAs/GaAlAs heterostructures presenti ng one single quantum well. The spatial distribution of the Al atoms r esponsible for the energy gap modifications has been calculated. Depth and lateral profiles in the quantum well of the Al recoil atoms extra cted from the two dimensional distribution have elicited different typ es of situations encountered in collision mixing experiments. Finally, this work shows that computer simulation is of great importance for s electing the parameters to realize lateral nano-structures such as qua ntum wires or dots.