The growth and performance of pseudomorphic separate confinement heter
ostructure blue-green laser diodes are described. The devices incorpor
ate the (Zn,Mg)(S,Se) quaternary as cladding layers surrounding a Zn(S
,Se) waveguiding layer, and having single or multiple quantum wells of
(Zn,Cd)Se. Devices have been operated at room temperature under pulse
d conditions (similar to 1 mu s, 10(-3) duty cycle) for periods up to
1 h. X-ray rocking curve full width at half-maxima as low as 44 arcsec
were obtained for a laser structure employing quaternary cladding lay
ers (Mg=9%, S=12%), consistent with transmission electron microscope o
bservations showing no dislocations or stacking faults. The Zn(Se,Te)
graded contact was adapted to form an ohmic contact to the top p-type
quaternary layer.