VISIBLE INGAP LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES/

Authors
TAI KC HUANG KF WU CC WYNN JD
Citation
Kc. Tai et al., VISIBLE INGAP LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES/, Applied physics letters, 63(20), 1993, pp. 2732-2734
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
20
Year of publication
1993
Pages
2732 - 2734
Database
ISI
SICI code
0003-6951(1993)63:20<2732:VILQTS>2.0.ZU;2-S
Abstract
Vertical cavity top surface emitting lasers emitting near 0.67 mu m vi sible spectral region were fabricated by one-step low pressure metalor ganic vapor phase deposition technique. The lasers used four 80-Angstr om-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.