REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

SiGe/Si quantum wire structures were successfully fabricated on a V-gr oove patterned Si substrate by using gas-source Si molecular beam epit axy (GS-SiMBE). A cross sectional image of transmission electron micro scope clarified a crescent-shaped SiGe layer at the bottom of the V-gr oove owing to anisotropy of the growth rate on the different crystal o rientations in GS-SiMBE.