EPITAXIAL-GROWTH OF CU(001) ON SI(001) - MECHANISMS OF ORIENTATION DEVELOPMENT AND DEFECT MORPHOLOGY

We describe the evolution of microstructure during ultrahigh vacuum io n beam sputter deposition of Cu (001) at room temperature on hydrogen- terminated Si (001). In situ reflection high energy electron diffracti on indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film grow th. Post-growth x-ray diffraction indicates the Cu film has a mosaic s pread of (001) textures of about +/- 2 degrees and that a small fracti on (0.001-0.01) is of (111) textures. High-resolution transmission ele ctron microscopy shows an abrupt Cu/Si interface with no interfacial s ilicide, and reveals an evolution in texture with Cu thickness so as t o reduce the mosaic spread about (001). Moire contrast suggests a near ly periodic elastic strain field extending into the Cu and Si at the i nterface. Other aspects of film growth which are critical to epitaxy a re also discussed.