I. Hashim et al., EPITAXIAL-GROWTH OF CU(001) ON SI(001) - MECHANISMS OF ORIENTATION DEVELOPMENT AND DEFECT MORPHOLOGY, Applied physics letters, 63(20), 1993, pp. 2833-2835
We describe the evolution of microstructure during ultrahigh vacuum io
n beam sputter deposition of Cu (001) at room temperature on hydrogen-
terminated Si (001). In situ reflection high energy electron diffracti
on indicates growth of an epitaxial Cu (001) film on Si (001) with the
intensity of the Bragg rods sharpening during 5-20 nm of Cu film grow
th. Post-growth x-ray diffraction indicates the Cu film has a mosaic s
pread of (001) textures of about +/- 2 degrees and that a small fracti
on (0.001-0.01) is of (111) textures. High-resolution transmission ele
ctron microscopy shows an abrupt Cu/Si interface with no interfacial s
ilicide, and reveals an evolution in texture with Cu thickness so as t
o reduce the mosaic spread about (001). Moire contrast suggests a near
ly periodic elastic strain field extending into the Cu and Si at the i
nterface. Other aspects of film growth which are critical to epitaxy a
re also discussed.