LOW-TEMPERATURE PHASE-TRANSITIONS IN TLGAS2 LAYER CRYSTALS

Citation
A. Aydinli et al., LOW-TEMPERATURE PHASE-TRANSITIONS IN TLGAS2 LAYER CRYSTALS, Solid state communications, 88(5), 1993, pp. 387-390
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
88
Issue
5
Year of publication
1993
Pages
387 - 390
Database
ISI
SICI code
0038-1098(1993)88:5<387:LPITLC>2.0.ZU;2-W
Abstract
Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 an d 295 K. No evidence for a soft mode behaviour has been found. The ano malies observed in the temperature dependence of low- and high-frequen cy phonon modes at approximately 250 and approximately 180 K, respecti vely, are explained as due to the phase transitions. It is supposed th at the phase transitions are caused by the deformation of structural c omplexes GaS4, rather than by slippage of Tl atom channels in [110] an d [110BAR] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other repres entatives of TlBX2 layer compounds.