AB-INITIO CALCULATIONS ON SILICON-CONTAINING CONJUGATED POLYMERS

Authors
Citation
Ak. Bakhshi, AB-INITIO CALCULATIONS ON SILICON-CONTAINING CONJUGATED POLYMERS, Solid state communications, 88(5), 1993, pp. 401-403
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
88
Issue
5
Year of publication
1993
Pages
401 - 403
Database
ISI
SICI code
0038-1098(1993)88:5<401:ACOSCP>2.0.ZU;2-4
Abstract
The energy band structures of silicon containing polymers with unsatur ated bonds such as polysilene (PS), polysemisilene (PSS), polysilacene (PSA) and polysemisilacene (PSSA) have been calculated on the basis o f ab initio crystal orbital method using double-zeta basis set. All th e silicon containing polymers are found to be less insulating than tra ns-polyacetylene. The calculated trend in the band gap values is PSA < PS < PSSA < PSS. Our results predict PS to be the strongest candidate for p-doping whereas PSA is predicted to have the greatest capacity f or n-doping.