CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS BY WTEM AND SIMS

Authors
GANIERE JD BUFFAT PA KY NH BLANCHARD B SPYCHER R
Citation
Jd. Ganiere et al., CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS BY WTEM AND SIMS, Analusis, 21(8), 1993, pp. 130000012-130000014
Citations number
5
Categorie Soggetti
Chemistry Analytical
Journal title
Analusis → ACNP
ISSN journal
03654877
Volume
21
Issue
8
Year of publication
1993
Pages
130000012 - 130000014
Database
ISI
SICI code
0365-4877(1993)21:8<130000012:COSBWA>2.0.ZU;2-0
Abstract
The observation of a wedge-shaped semiconductor specimen by transmissi on electron microscopy (WTEM) is an interesting alternative to convent ional TEM. Information on chemical composition, layer thickness down t o atomic resolution, spatial extension of the interfaces can be obtain ed. Secondary ion mass spectrometry (SIMS) is a complementary techniqu e used to gain information on impurity concentration present in the se miconductor material.