TEMPERATURE EFFECT ON THE HEIGHT OF METAL -SEMICONDUCTOR CONTACT BARRIER DURING ITS FORMATION

Authors
USHAKOV NM GELBUKH SS PETROSYAN VI
Citation
Nm. Ushakov et al., TEMPERATURE EFFECT ON THE HEIGHT OF METAL -SEMICONDUCTOR CONTACT BARRIER DURING ITS FORMATION, Zurnal tehniceskoj fiziki, 66(11), 1996, pp. 197-200
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Zurnal tehniceskoj fiziki → ACNP
ISSN journal
00444642
Volume
66
Issue
11
Year of publication
1996
Pages
197 - 200
Database
ISI
SICI code
0044-4642(1996)66:11<197:TEOTHO>2.0.ZU;2-8