Ex. Ping et V. Dalal, EXCITON PHOTOLUMINESCENCE OF QUANTUM-WELLS AFFECTED BY THERMAL MIGRATION AND INHERENT INTERFACE FLUCTUATION, Journal of applied physics, 74(9), 1993, pp. 5349-5353
Exciton photoluminescence (PL) of quantum wells (QW), affected by the
thermal migration and the inherent interface roughness, has been studi
ed by a model which includes exciton transfer between the growth islan
ds with one atomic layer difference in well thickness. Analytical expr
essions, showing a red shifting and linewidth changing compared to the
exciton PL spectra without thermal migration, are obtained. At low te
mperature, the red shifting and the linewidth changing are uniquely de
termined by the geometry of the QW. At high temperature, the red shift
and the linewidth changing depends on the temperature, structure, and
inherent interface fluctuation of the QW. Under the influence of the
thermal migration, the inconsistency of the PL and PL excitation spect
ra has been reexamined and quantitatively obtained as a function of th
e temperature, quality, and structure of the QW.