EFFECT OF BAND-TO-BAND (RADIATIVE) TRANSITIONS IN SEMICONDUCTORS

Efforts have been made to study the effect of the band-to-band radiati ve transitions in semiconductors. The computed results show the excess carrier density (DELTAn) to be nonuniform across the material. The va riation in DELTAn has been computed. This result leads to a uniform ca rrier density in the material under certain conditions. Attempts are t aken to study the variation of the coefficients b and c as a function of the constant alpha for the uniform carrier density conditions. Fina lly experimental result in an n-N GaAs-Al0.3-Ga0.7As heterojunction ha s been presented, which shows an agreement with the theoretical result so obtained.