Efforts have been made to study the effect of the band-to-band radiati
ve transitions in semiconductors. The computed results show the excess
carrier density (DELTAn) to be nonuniform across the material. The va
riation in DELTAn has been computed. This result leads to a uniform ca
rrier density in the material under certain conditions. Attempts are t
aken to study the variation of the coefficients b and c as a function
of the constant alpha for the uniform carrier density conditions. Fina
lly experimental result in an n-N GaAs-Al0.3-Ga0.7As heterojunction ha
s been presented, which shows an agreement with the theoretical result
so obtained.