STUDY OF DEFECTS IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS BY CROSS-SECTIONAL CATHODOLUMINESCENCE

Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemica l vapor deposited diamond films. The CL emission is mainly localized a t the grain boundaries of the columnar grains. The concentration of di slocation related radiative centers is higher in boundaries parallel t o the growth axis than in boundaries parallel to the sample surface. T he opposite occurs with the concentration of centers related to the pr esence of nitrogen.