PHOTOEMISSION INVESTIGATION OF THE ELECTRONIC-STRUCTURE AT POLYCRYSTALLINE CUINSE2 THIN-FILM INTERFACES

The surface versus bulk composition and electronic structure of polycr ystalline CuInSe2 thin-film interfaces were studied by synchrotron rad iation soft-x-ray photoemission spectroscopy. An n-type In2Se3/CuIn3Se 5 surface layer forms on enhanced-grain polycrystalline thin-film p-ty pe CuInSe2 during fabrication. Enhanced-grain CuInSe2 films were sputt er etched (500 V Ar) and analyzed in situ to determine core-level bind ing energies and Fermi-level positions for the n-type surface and the p-type CuInSe2 bulk within +/- 0.1 eV. The transition between the n-ty pe surface and the p-type bulk was experimentally observed by noting t he change in the position of the valence-band maximum relative to the Fermi level E(F). From these measurements, the valence-band offset DEL TAE(v) between the layers was determined to be 0.50 eV. Measurement of the work functions phi was also completed and reveals phi = 4.75 eV f or the In2Se3 (CuIn3Se5) surface layer and phi = 4.04 eV for the bulk CuInSe2. Combining these results allows construction of a surface band diagram for this device configuration as well as determination of the relationship between composition, electronic structure, and device pe rformance.