EXPERIMENTAL INVESTIGATION AND MODELING OF THE ROLE OF EXTENDED DEFECTS DURING THERMAL-OXIDATION

A special test structure consisting of a box-shaped boron profile capp ed by a lightly doped arsenic layer has been used to determine that ex tended defects absorb some of the interstitials injected during a wet thermal oxidation. Reduced oxidation-enhanced diffusion of the boron l ayer is observed for samples containing the extended defects. Secondar y ion mass spectrometry measurements are combined with transmission el ectron microscopy measurements to calculate the D(I)C(I) product whic h is found to be in good agreement with values previously obtained fro m gold diffusion experiments. In addition, a lower bound on the ratio of the net number of silicon atoms injected during the oxidation to th e number of silicon atoms consumed is calculated. A one-dimensional mo del for the growth of the extended defects has been implemented into S UPREM-IV. Simulations with the new model agree with experimental data. The growth of the extended defects is also shown to be a reaction-lim ited process.