HETEROJUNCTIONS OF INP WITH AMORPHOUS HYDROGENATED SILICON

We report the fabrication and properties of p-InP:n-amorphous silicon heterojunctions. The good rectification ratio of 1000:1 at 0.5 V, and existence of straight-line capacitance curves, indicated a sharp inter face of good quality. Optical internal photoemission measurements unde r various bias conditions showed that the band offsets were 0.06 and 0 .37 eV for the valence and conduction bands, respectively. Photovoltai c action resulted in open circuit voltages of over 0.9 V at air mass 2 solar illumination and efficiencies of over 9%.