MEASUREMENT OF ALUMINUM CONCENTRATION IN EPITAXIAL-FILMS OF ALXGA1-XAS ON (110)-ORIENTED AND (111)-ORIENTED GAAS BY DOUBLE AXIS X-RAY-DIFFRACTOMETRY

Authors
LIND MD FARLEY CW SULLIVAN GJ GRANT RW
Citation
Md. Lind et al., MEASUREMENT OF ALUMINUM CONCENTRATION IN EPITAXIAL-FILMS OF ALXGA1-XAS ON (110)-ORIENTED AND (111)-ORIENTED GAAS BY DOUBLE AXIS X-RAY-DIFFRACTOMETRY, Journal of applied physics, 74(9), 1993, pp. 5910-5912
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
9
Year of publication
1993
Pages
5910 - 5912
Database
ISI
SICI code
0021-8979(1993)74:9<5910:MOACIE>2.0.ZU;2-5
Abstract
The relationship between the Al mole fraction (x) and the angular sepa ration (DELTAtheta) of film and substrate maxima in double axis x-ray diffraction rocking curves for strained epitaxial AlxGa1-xAs films on (110)- and (111)-oriented GaAs substrates was determined. It was deriv ed from measured DELTAtheta's for 5000-angstrom-thick strained epitaxi al AlAs films grown by molecular beam epitaxy on (110)- and (111)-orie nted GaAs substrates and published values of the AlAs and GaAs lattice parameters and GaAs elastic constants. The critical thickness for rel axation appears to be significantly less for (111)- than for (100)- an d (110)-oriented films.