In amorphous antimony condensates, besides the normal semiconducting s
tate (a-Sb), the metallic state (a(m)-Sb) is present (during condensat
ion on an amorphous bismuth layer). The conductivity, sigma, of the am
orphous metallic Sb layer, with approximately 20 nm thickness, at T =
20 K, is higher by approximately six orders of magnitude than sigma fo
r a-Sb. Unlike the exponential dependence lg sigma is similar to T-1/4
for a-Sb, a linear dependence sigma(T) is similar to T is observed in
the case of a(m)-Sb at T < 70 K. The results obtained mean that, unli
ke a-Sb where E(F) < E(c) (E(F) is the Fermi energy and E(c) is the mo
bility threshold), for a(m)-Sb the conditions are E(F) > E(c).