SEMICONDUCTING PROPERTIES OF TL2TE3 SINGLE-CRYSTALS

Electrical conductivity and Hall effect measurements were Performed on single crystals of Tl2Te3 to have the general semiconducting behaviou r of this compound. The measurements were done at the temperature rang e 160 - 350 K. All crystals were found to be of p-type conductivity. T he values of the Hall coefficient and the electrical conductivity at r oom temperature were 1.59 x 10(3) cm3/coul and 3.2 x 10(-2) OMEGA-1 cm -1, respectively. The hole concentration at the same temperature was d riven as 39.31 X 10(11) cm-3. The energy gap was found to be 0.7 eV wh ere the depth of impurity centers was 0.45 eV. The temperature depende nce of the mobility is discussed.