THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

Authors
DOSTOV VL IPATOVA IP KULIKOV AY
Citation
Vl. Dostov et al., THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION, Semiconductor science and technology, 8(11), 1993, pp. 1935-1943
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
11
Year of publication
1993
Pages
1935 - 1943
Database
ISI
SICI code
0268-1242(1993)8:11<1935:TTOACV>2.0.ZU;2-Z
Abstract
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equation s for transport of reactive components and kinetic equations for surfa ce growth processes connected by nonlinear adiabatic boundary conditio ns. No one of these stages is supposed to be the limiting one. Calcula ted variations of growth rate and impurity concentrations along the gr owing layer fit experimental data well.