THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS, ANTI-THRESHOLDS AND RATES IN GAAS AND ALGAAS

Authors
WILSON SP BRAND S BEATTIE AR ABRAM RA
Citation
Sp. Wilson et al., THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS, ANTI-THRESHOLDS AND RATES IN GAAS AND ALGAAS, Semiconductor science and technology, 8(11), 1993, pp. 1944-1956
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
11
Year of publication
1993
Pages
1944 - 1956
Database
ISI
SICI code
0268-1242(1993)8:11<1944:TUORBI>2.0.ZU;2-J
Abstract
We report a comprehensive description of direction-dependent impact io nization threshold/anti-threshold calculations in GaAs and Al0.3Ga0.7A s using a realistic pseudopotential band structure model. Both electro n- and hole-initiated processes are studied. In the case of GaAs rate calculations are presented for some electron- and hole-initiated proce sses, while for Al0.3Ga0.7As results of rate calculations for some ele ctron-initiated processes are given.