COMPARISON OF QUANTUM-WELL INFRARED PHOTODETECTORS GROWN ON DIFFERENTMOLECULAR-BEAM EPITAXIAL SYSTEMS

Authors
WILSON PH LAMM M LIU HC LI JM BUCHANAN M WASILEWSKI ZR SIMMONS JG SCHAFF WJ
Citation
Ph. Wilson et al., COMPARISON OF QUANTUM-WELL INFRARED PHOTODETECTORS GROWN ON DIFFERENTMOLECULAR-BEAM EPITAXIAL SYSTEMS, Semiconductor science and technology, 8(11), 1993, pp. 2010-2014
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
11
Year of publication
1993
Pages
2010 - 2014
Database
ISI
SICI code
0268-1242(1993)8:11<2010:COQIPG>2.0.ZU;2-G
Abstract
A systematic comparison of quantum well infrared photodetectors (QWIPS ) made by different molecular beam epitaxy (MBE) systems is presented. OWIPS with identical layer specifications were requested from three d ifferent MBE facilities. Measurements of dark current, detector respon sivities, infrared absorption and detectivities were carried out. Alth ough good uniformity between detectors was obtained within the same MB E wafer, variations were observed between samples with the same specif ications from different MBE systems. The results of this study illustr ate the present accuracy Of MBE technology.