IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON

Authors
ZHANG FL HAO PH SHI G HOU XY HUANG DM WANG X
Citation
Fl. Zhang et al., IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON, Semiconductor science and technology, 8(11), 1993, pp. 2015-2017
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
11
Year of publication
1993
Pages
2015 - 2017
Database
ISI
SICI code
0268-1242(1993)8:11<2015:IOEPOL>2.0.ZU;2-J
Abstract
By applying some post-pore-forming treatments, we have achieved solid state electroluminescence of an Au/PS/Si structure. Stable visible lig ht emission is observed under forward bias with a threshold voltage an d current density down to 6 V and 30 mA cm-2.