In this study the deposition of Zr(B.C.N) layers by means of low tempe
rature (330-degrees-C) pulsed DC plasma assisted CVD process was inves
tigated using a metallo-organic compound as precursor being synthesize
d in a new way. It is shown that the deposition of Zr(B,C,N) layers is
possible with high hardness and adhesion in the investigated paramete
r window.