INVERSION CHANNEL HFET WITH UNITY CURRENT GAIN FREQUENCY OF 14GHZ ANDSURFACE-EMITTING LASER FROM A SINGLE EPITAXIAL-GROWTH

Authors
KIELY PA EVALDSSON PA COOKE P TAYLOR GW
Citation
Pa. Kiely et al., INVERSION CHANNEL HFET WITH UNITY CURRENT GAIN FREQUENCY OF 14GHZ ANDSURFACE-EMITTING LASER FROM A SINGLE EPITAXIAL-GROWTH, Electronics Letters, 29(17), 1993, pp. 1521-1523
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
17
Year of publication
1993
Pages
1521 - 1523
Database
ISI
SICI code
0013-5194(1993)29:17<1521:ICHWUC>2.0.ZU;2-8
Abstract
High speed capability up to 14 GHz is reported for the inversion chann el HFET using the inversion channel technology device structure. The t ransistor is fabricated from the same epitaxial growth and with the sa me fabrication technology as previously used to demonstrate the vertic al cavity double heterostructure optoelectronic switching (DOES) law.