VERY HIGH MODULATION EFFICIENCY OF ULTRALOW THRESHOLD CURRENT SINGLE-QUANTUM-WELL INGAAS LASERS

Authors
CHEN TR ZHAO B ENG L ZHUANG YH OBRIEN J YARIV A
Citation
Tr. Chen et al., VERY HIGH MODULATION EFFICIENCY OF ULTRALOW THRESHOLD CURRENT SINGLE-QUANTUM-WELL INGAAS LASERS, Electronics Letters, 29(17), 1993, pp. 1525-1526
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
17
Year of publication
1993
Pages
1525 - 1526
Database
ISI
SICI code
0013-5194(1993)29:17<1525:VHMEOU>2.0.ZU;2-E
Abstract
A record high current modulation efficiency of 5 GHz/square-root (mA) has been demonstrated in an ultralow threshold strained layer single q uantum well InGaAs laser.