GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS

Authors
ANIEL F JINDELORME Y CROZAT P DELUSTRAC A ADDE R VANHOVE M DERAEDT W VANROSSUM M JIN Y LAUNOIS H
Citation
F. Aniel et al., GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS, Electronics Letters, 29(17), 1993, pp. 1570-1571
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
17
Year of publication
1993
Pages
1570 - 1571
Database
ISI
SICI code
0013-5194(1993)29:17<1570:GLEPDO>2.0.ZU;2-B
Abstract
AlGaAs/InGaAs/GaAs MODFETs having 20% indium in the channel and Si pla nar doping (5 x 10(12) cm-2) have been fabricated with gate lengths of 0.1-0.7 mum and a width of 100 mum. Gates that are longer than 0.2 mu m are T-shaped and the narrower gates (0-1 and 0.15 mum) are triangula r. From DC measurement a maximum G(m) of 1100 mS/mm has been obtained. The current gain cutoff frequency F(t) corrected for the access resis tances is 145 GHz, corresponding to an intrinsic transition frequency of 220 GHz.