FULLY ION-IMPLANTED INP INGAAS HETEROJUNCTION FET FABRICATION IN A PHOTODIODE LAYER STRUCTURE FOR MONOLITHIC INTEGRATION/

Authors
WALTER JW LAUTERBACH C ROMER D MULLER J EBBINGHAUS G
Citation
Jw. Walter et al., FULLY ION-IMPLANTED INP INGAAS HETEROJUNCTION FET FABRICATION IN A PHOTODIODE LAYER STRUCTURE FOR MONOLITHIC INTEGRATION/, Electronics Letters, 29(18), 1993, pp. 1599-1600
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
18
Year of publication
1993
Pages
1599 - 1600
Database
ISI
SICI code
0013-5194(1993)29:18<1599:FIIIHF>2.0.ZU;2-6
Abstract
A fully ion-implanted InP/InGaAs HJFET has been fabricated in a layer structure optimised for a pin photodiode. Ion implantation has been us ed to form the channel, to improve the source and drain contact resist ances, and to define the 1.5 mum long gate. The HJFETs show a minimum output conductance of 14 mS/mm and a maximum transconductance of 140 m S/mm.