1ST DEMONSTRATION OF 2-PHOTON ABSORPTION IN A SEMICONDUCTOR WAVE-GUIDE PUMPED BY A DIODE-LASER

Authors
TSANG HK VASILEV PP WHITE IH PENTY RV AITCHISON JS
Citation
Hk. Tsang et al., 1ST DEMONSTRATION OF 2-PHOTON ABSORPTION IN A SEMICONDUCTOR WAVE-GUIDE PUMPED BY A DIODE-LASER, Electronics Letters, 29(18), 1993, pp. 1660-1661
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
18
Year of publication
1993
Pages
1660 - 1661
Database
ISI
SICI code
0013-5194(1993)29:18<1660:1DO2AI>2.0.ZU;2-I
Abstract
For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode la ser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent w ith the presence of two photon absorption in the waveguide. The measur ed two photon absorption coefficient was 11 +/- 2 cm/GW.