NEW LATCH-UP-FREE IGBT WITH LOW ON-RESISTANCE

Authors
BOARD K HU ZR
Citation
K. Board et Zr. Hu, NEW LATCH-UP-FREE IGBT WITH LOW ON-RESISTANCE, Electronics Letters, 29(18), 1993, pp. 1664-1666
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
18
Year of publication
1993
Pages
1664 - 1666
Database
ISI
SICI code
0013-5194(1993)29:18<1664:NLIWLO>2.0.ZU;2-3
Abstract
A new form of IGBT is presented which does not latch up. in the on-sta te however hard it is driven. It also has a very low on-resistance due to the small cell width achievable and the full conductivity modulati on of the channel region.