7.4 GBIT S MONOLITHICALLY INTEGRATED GAAS/ALGAAS LASER DIODE-LASER DRIVER STRUCTURE/

Authors
HORNUNG J WANG ZG BRONNER W OLANDER E KOHLER K GANSER P RAYNOR B BENZ W LUDWIG M
Citation
J. Hornung et al., 7.4 GBIT S MONOLITHICALLY INTEGRATED GAAS/ALGAAS LASER DIODE-LASER DRIVER STRUCTURE/, Electronics Letters, 29(19), 1993, pp. 1694-1696
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
19
Year of publication
1993
Pages
1694 - 1696
Database
ISI
SICI code
0013-5194(1993)29:19<1694:7GSMIG>2.0.ZU;2-W
Abstract
A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multiquantum well la ser, monolithically integrated with a laser driver, was realised on 2 inch GaAs substrate wafers. In an optical data communication setup, pe rformance up to data rates of 7.4Gbit/s was demonstrated.