WARM ELECTRON-ENERGY-LOSS IN GAINAS ALINAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/

Electron energy loss rates via the emission of acoustic phonons in mod erately degenerate GaInAs/AlInAs high electron mobility transistor str uctures are investigated at electron temperatures between T(e) = 1.8 a nd 15 K. Two experimental techniques, Shubnikov-de Haas and mobility m easurements were employed in the investigations. The results are compa red with a model based on three-dimensional electron energy loss by pi ezoelectric and deformation potential scattering. It is shown that the enhanced loss rates at high electric fields as obtained using the for mer technique is the result of its failure at these fields. The agreem ent between the results of the mobility experiments and the theory is excellent over the temperature range of interest.