A PHOTOLUMINESCENCE STUDY OF CF4 REACTIVE-ION-ETCHED SILICON - VARIOUS PROCESS CONDITIONS AND MAGNETICALLY ENHANCED ETCHING

The impact of reactive-ion-etching (RIE) on the near-surface crystal q uality of Czochralski silicon has been studied by photoluminescence sp ectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydro gen to the plasma as well as the time of treatment are studied and dis cussed in terms of defect formation and etch rate. Photoluminescence s pectra of samples recorded after a magnetically enhanced reactive-ion- etching process are also presented. The introduction of defects depend ing on the self-bias voltage and the etch rate are investigated for di fferent magnetic fields.