We investigated interband tunneling transport through a hole well in f
ive GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effec
t of the variation of barrier and well widths is systematically studie
d. Low temperature measurements were performed using high magnetic fie
lds applied perpendicular to the current and hydrostatic pressures as
external perturbations. A resonant current through the ground heavy ho
le subband in the GaSb well could be identified for the first time. Th
is examination points out (i) the role of in-plane momentum conservati
on in determining the resonance onset voltage, and (ii) the occurrence
of a shoulder in the current when a maximum of states conducts throug
h a resonant subband.